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4am13 silicon n-channel/p-channel power mos fet array ade-208-1211 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance n-channel: r ds(on) 0.4 , v gs = 10 v, i d = 1.5 a p-channel: r ds(on) 0.45 , v gs = ?0 v, i d = ?.5 a capable of 4 v gate drive low drive current high speed switching high density mounting suitable for h-bridged motor driver
4am13 2 outline sp-10 2 g 1 s 4 g 6 g 8 g 3 d 5 d 7 d 9 d s 10 1, 10. source 2, 4, 6, 8. gate 3, 5, 7, 9. drain 1 2 3 4 5 6 7 8 9 10 absolute maximum ratings (ta = 25?) (1 unit) rating item symbol nch pch unit drain to source voltage v dss 60 ?0 v gate to source voltage v gss ?0 ?0 v drain current i d 33a drain peak current i d(pulse) * 1 12 ?2 a body to drain diode reverse drain current i dr 33a channel dissipation pch (tc = 25?)* 2 28 w channel dissipation pch* 2 4w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? notes: 1. pw 10 ?, duty cycle 1% 2. 4 devices operation
4am13 3 electrical characteristics (ta = 25?) (1 unit) n channel p channel item symbol min typ max min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ?0 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 ?0 v i g = ?00 ?, v ds = 0 gate to source leak current i gss ?0 ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 250 ?50 ? v ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.0 ?.0 ?.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.25 0.35 0.28 0.4 w i d = 1.5 a, v gs = 10 v* 1 0.35 0.5 0.4 0.55 w i d = 1.5 a, v gs = 4 v* 1 forward transfer admittance |y fs | 1.5 2.5 1.5 2.5 s i d = 1.5 a, v ds = 10 v* 1 input capacitance ciss 240 400 pf v ds = 10 v, v gs = 0, output capacitance coss 115 240 pf f = 1 mhz reverse transfer capacitance crss 35 70 pf turn-on delay time t d(on) 4 5 ns i d = 1.5 a, v gs = 10 v, rise time t r ?0 ?5 nsr l = 20 w turn-off delay time t d(off) 80 180 ns fall time t f ?0 ?0 ns body to drain diode forward voltage v df 1.2 ?.1 v i f = 3 a, v gs = 0 body to drain diode reverse recovery time t rr ?5 ?40 nsi f = 3 a, v gs = 0, dif/dt = 50 a/? note: 1. pulse test polarity of test conditions for p channel device is reversed.
4am13 4 6 50 150 ambient temperature ta (?) maximum channel dissipation curve 5 1 25 75 125 0 3 4 channel dissipation pch (w) 4 device operation 2 100 3 device operation 2 device operation 1 device operation condition : channel dissipation of each die is identical 30 50 150 case temperature t c (?) maximum channel dissipation curve 25 75 125 0 20 channel dissipation pch (w) 4 device operation 10 100 3 device operation 2 device operation 1 device operation condition : channel dissipation of each die is identical ?0 ? ?.05 ? ?0 ?00 drain to source voltage v ds (v) drain current i d (a) ?0 ?.1 ?.3 ? ?0 ta = 25? 10 m s 100 m s dc operation (t c = 25?) 1 ms pw = 10 ms (1 shot) maximum safe operation area (p-channel) ?0 ? ? ?.5 ?.2 ?.1 operation in this area is limited by r ds (on) ? ? ?0 drain to source voltage v ds (v) typical output characteristics ? ? ? ? ? pulse test 0 ? ? v gs = ?.0 v ?.5 v ?.0 v ?.5 v ?0 v ? v drain current i d (a) ? v
4am13 5 ? ? ? gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics ? ? ? ? ? ?5? 75? 0 ? ? v ds = ?0 v pulse test t c = 25? ?.5 ? ?0 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) ? ?.5 ? ? ? 0 ? ?.5 drain to source saturation voltage vs. gate to source voltage ? a ? a i d = ? a pulse test 5 ? ?0 drain current i d (a) static drain to source on state resistance r ds (on) ( w ) 2 0.1 ?.5 ? ?0 ?.2 0.5 1.0 static drain to source on state resistance vs. drain current 0.2 0.05 ? ?0 v v gs = ? v pulse test 1.0 40 160 case temperature t c (?) static drain to source on state resistance r ds (on) ( w ) 0.8 0.2 0 80 120 0 0.4 0.6 static drain to source on state resistance vs. temperature i d = ?, ? a v gs = ?0 v v gs = ? v ? a ? a ? a ? a ?0 pulse test
4am13 6 10 ?.2 ? drain current i d (a) forward transfer admittance ? yfs ? (s) 5 0.5 ?.1 ?.5 ? 0.1 1 2 forward transfer admittance vs. drain current t c = 25? ?5? 75? v ds = ?0 v pulse test ?.05 0.2 ? 500 ?.5 ?0 reverse drain current i dr (a) reverse recovery time t rr (ns) 200 20 ?.2 ? ? 5 50 100 body to drain diode reverse recovery time di/dt = 50 a/ m s, v gs = 0 ta = 25? pulse test ?.1 10 ? ?0 ?0 drain to source voltage v ds (v) capacitance c (pf) 1,000 ?0 ?0 ?0 0 100 typical capacitance vs. drain to source voltage 0 10 crss coss ciss v gs = 0 f = 1 mhz 0 16 40 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics ?0 ?0 8 02432 ?00 ?0 ?0 v ds ?0 v ?0 v 0 ? ?6 ?0 ?2 ? v dd = ?0 v ?5 v i d = ? a ?5 v v dd = ?0 v v gs gate to source voltage v gs (v)
4am13 7 500 ?0 drain current i d (a) switching time t (ns) 200 20 ?.2 ?.5 ? ? 5 50 100 ?.1 10 ? switching characteristics t f t d (on) t r v gs = ?0 v pw = 2 m s, duty < 1% t d (off) ? ?.8 ?.0 source to drain voltage v sd (v) reverse drain current i dr (a) ? ?.4 ?.2 ?.6 ? ? reverse drain current vs. source to drain voltage pulse test 0 ? ?0 v ? v v gs = 0, 5 v
4am13 8 50 0.05 1 10 100 drain to source voltage v ds (v) drain current i d (a) 10 0.1 0.3 3 30 ta = 25? 10 m s 100 m s dc operation (t c = 25?) 1 ms pw = 10 ms (1 shot) maximum safe operation area (n-channel) 30 3 1 0.3 0.1 operation in this area is limited by r ds (on) typical output characteristics 6 drain to source voltage v ds (v) 8 4 2 10 drain current i d (a) 0 1 2 3 4 0 5 v gs = 2 v pulse test 10 v 5 v 4 v 3 v 3.5 v 2.5 v typical transfer characteristics 3 gate to source voltage v gs (v) 4 2 1 05 1 2 3 4 5 0 drain current i d (a) t c = 25? 75? v ds = 10 v pulse test ?5? drain to source saturation voltage vs. gate to source voltage 6 gate to source voltage v gs (v) 8 4 2 010 0.8 1.2 1.6 2.0 0 0.4 drain to source saturation voltage v ds (on) (v) pulse test i d = 1 a 5 a 2 a
4am13 9 2 drain current i d (a) 5 1.0 0.5 20 0.2 0.5 1.0 2 5 0.2 0.1 0.05 10 static drain to source on state resistance vs. drain current static drain to source on state resistance r ds (on) ( w ) v gs = 4 v 10 v pulse test 80 case temperature t c (?) 120 40 0 0.2 0.4 0.6 0.8 1.0 ?0 0 160 static drain to source on state resistance vs. temperature static drain to source on state resistance r ds (on) ( w ) i d = 2 a pulse test v gs = 4 v v gs = 10 v 5 a 1 a 1 a, 2 a forward transfer admittance vs. drain current 10 5 2 1.0 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1.0 5 drain current i d (a) 2 forward transfer admittance ? yfs ? (s) t c = 25? v ds = 10 v pulse test ?5? 75? 500 200 100 50 20 10 5 0.2 0.5 2 20 reverse drain current i dr (a) 5 1.0 10 body to drain diode reverse recovery time reverse recovery time t rr (ns) di/dt = 50 a/ m s, ta = 25? v gs = 0 pulse test
4am13 10 typical capacitance vs. drain to source voltage 1000 300 100 30 3 1 capacitance c (pf) 01020 50 drain to source voltage v ds (v) 30 10 40 v gs = 0 f = 1 mhz ciss coss crss 100 80 60 40 20 02 6 8 gate charge qg (nc) 4 20 16 12 8 4 dynamic input characteristics drain to source voltage v ds (v) gate to source voltage v gs (v) 10 v ds v gs v dd = 50 v 10 v 25 v v dd = 50 v 25 v 10 v i d = 2 a switching characteristics 100 50 20 10 2 1 0.05 0.1 0.5 5 drain current i d (a) 1.0 0.2 2 switching time t (ns) 5 t d (off) t f t r v gs = 10 v v dd = 30 v pw = 2 m s, duty < 1 % t d (on) 5 4 3 2 1 0 0.4 1.2 1.6 2.0 source to drain voltage v sd (v) 0.8 reverse drain current vs. source to drain voltage reverse drain current i dr (a) v gs = 0, ? v pulse test 10 v 15 v 5 v
4am13 11 package dimensions hitachi code jedec eiaj mass (reference value) sp-10 2.9 g 26.5 0.3 1.82 2.54 1.4 0.55 1.5 0.2 0.55 0.1 4.0 0.2 10.0 0.3 10.5 0.5 2.5 1234 56 7 8910 +0.1 ?.06 as of january, 2001 unit: mm
4am13 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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